View AUIRLL024N_8686571.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet ? power mosfet s d g specifically designed for automotive applications, thiscellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description features advanced planar technology low on-resistance logic level gate drive dynamic dv/dt rating 150c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * sot-223 AUIRLL024N gds gate drain source absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss 55v r ds(on) max. 0.065 i d 3.1a hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation (pcb mount) w p d @t a = 25c power dissipation (pcb mount) w linear derating factor (pcb mount) w/c v gs gate-to-source voltage v e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) 90 120 r ja junction-to-ambient (pcb mount, steady state) 50 60 max. 4.4 2.5 12 3.1 5.0 0.1 120 3.1 1.0 c/w c a -55 to + 150 2.1 8.3 16
automotive grade

form quantity tube 95 AUIRLL024N tape and reel 2500 AUIRLL024Ntr standard pack base part number package type orderable part number AUIRLL024N sot-223 downloaded from: http:///

repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 25 mh, r g = 25 , i as = 3.1a. (see figure 12) i sd , di/dt 270a/ s, v dd v (br)dss , t j 150c pulse width 300 s; duty cycle 2%. when mounted on fr-4 board using minimum recommended footprint.. when mounted on 1 inch square copper board, for comparison with other smd devices. notes: static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.048 CCC v/c CCC CCC 0.065 CCC CCC 0.080 CCC CCC 0.100 v gs(th) gate threshold voltage 1.0 CCC 2.0 v gfs forward transconductance 3.3 CCC CCC s i dss drain-to-source leakage current CCC CCC 25 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge CCC 10.4 15.6 q gs gate-to-source charge CCC 1.5 2.3 q gd gate-to-drain ("miller") charge CCC 5.5 8.3 t d(on) turn-on delay time CCC 7.4 CCC t r rise time CCC 21 CCC t d(off) turn-off delay time CCC 18 CCC t f fall time CCC 25 CCC c iss input capacitance CCC 510 CCC c oss output capacitance CCC 140 CCC c rss reverse transfer capacitance CCC 58 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 39 58 ns q rr reverse recovery charge CCC 63 94 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 25v, i d = 1.9a i d = 1.9a v ds = 44v conditions r d =15 , see fig.10 v gs = 0v v ds = 25v ? = 1.0mhz,see fig.5 v gs = 16v v gs = -16v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 1.9a, v gs = 0v t j = 25c, i f = 1.9a di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 3.1a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 125c v gs = 5.0v, see fig 6 and 13 v dd = 28v i d = 1.9a r g = 24 a na ns nc pf CCC CCC CCC CCC 3.1 12 a r ds(on) static drain-to-source on-resistance v gs = 5.0v, i d = 2.5a v gs = 4.0v, i d = 1.6a downloaded from: http:///

fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.1a 1 10 100 2 4 6 8 10 12 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j downloaded from: http:///

fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 200 400 600 800 1000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.9a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms downloaded from: http:///

fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) i , drain current (a) c d fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms

1 0.1 %

+ -
downloaded from: http:///

fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as fig 12a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 10v q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.4a 2.5a 3.1a downloaded from: http:///

ll024n date code y= year ww= work week a= automotive, lead free downloaded from: http:///

! 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4

downloaded from: http:///

? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? sot-223 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m2(+/- 150v ) ??? (per aec-q101-002) human body model class h1a(+/- 500v ) ??? (per aec-q101-001) downloaded from: http:///

unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir)reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated part marking on page 7 ? updated data sheet with new ir corporate template revision history 3/25/2014 downloaded from: http:///

▲Up To Search▲

Price & Availability of AUIRLL024N

	To Download AUIRLL024N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .